モデル G2R50MT33K メーカー GeneSiC Semiconductor 分類 MOSFET RoHS データシート G2R50MT33K 説明 MOSFET 3300V 50mOhmTO-247-4 SiC MOSFET
メーカー GeneSiC Semiconductor 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 1 uA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-247-4 Packaging Tube Pd - Power Dissipation 536 W Qg - Gate Charge 340 nC Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 3.3 kV Vgs - Gate-Source Voltage - 5 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V