モデル GS66502B-TR メーカー GaN Systems 分類 MOSFET RoHS データシート GS66502B-TR 説明 MOSFET 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled
メーカー GaN Systems 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Packaging Reel Qg - Gate Charge 1.6 nC Rds On - Drain-Source Resistance 260 mOhms Technology GaN Tradename GaNPX Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 10 V, + 7 V Vgs th - Gate-Source Threshold Voltage 2.6 V