モデル GS-065-011-2-L-TR メーカー GaN Systems 分類 MOSFET RoHS データシート GS-065-011-2-L-TR 説明 MOSFET 650V, 11A, GaN E-mode, 8x8 PDFN, Bottom-side cooled
メーカー GaN Systems 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 11 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case PDFN-6 Packaging Cut Tape, MouseReel, Reel Qg - Gate Charge 2 NC Rds On - Drain-Source Resistance 150 mOhms Technology GaN-on-Si Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 10 V, + 7 V Vgs th - Gate-Source Threshold Voltage 1.5 V