モデル G3R40MT12D メーカー GeneSiC Semiconductor 分類 MOSFET RoHS データシート G3R40MT12D 説明 MOSFET 1200V 40mO TO-247-3 G3R SiC MOSFET
メーカー GeneSiC Semiconductor 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 63 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 297 W Qg - Gate Charge 88 nC Rds On - Drain-Source Resistance 40 mOhms Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs - Gate-Source Voltage - 5 V, + 15 V Vgs th - Gate-Source Threshold Voltage 2.7 V