メーカー ROHM Semiconductor 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Bulk Pd - Power Dissipation 46 W Qg - Gate Charge 14.5 nC Rds On - Drain-Source Resistance 570 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V