モデル IRFZ14PBF-BE3 メーカー Vishay / Siliconix 分類 MOSFET RoHS データシート IRFZ14PBF-BE3 説明 MOSFET 60V N-CH HEXFET MOSFET
メーカー Vishay / Siliconix 分類 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 10 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220AB-3 Packaging Tube Pd - Power Dissipation 43 W Qg - Gate Charge 11 nC Rds On - Drain-Source Resistance 200 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V