HMC1082 5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC, Medium Power Amplifier
The HMC1082CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), driver amplifier that operates from 5.5 GHz to 18 GHz. The HMC1082CHIP provides a typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm of output power for 1 dB compression, requiring only 220 mA from a 5 V supply voltage. The saturated output power (PSAT) is 26 dBm with 24% power added efficiency (PAE).
The HMC1082CHIP is an ideal driver amplifier for a wide range of applications including point to point radios from 5.5 GHz to 18 GHz and marine radars at 9 GHz. The HMC1082CHIP can also be used for 6 GHz to 18 GHz EW and ECM applications.
- Software defined radios
- Electronics warfare (EW)
- Radar applications
- Electronic countermeasures (ECMs)
Features and Benefits
- High saturated output power: 26 dBm with 24% PAE
- High gain: 24 dB typical
- High output IP3: 36 dBm typical
- High output P1dB: 25.5 dBm
- Die size: 2.19 mm × 1.05 × 0.1 mm